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High Mobility TFTs (Thin Film Transistors)


Plasma Quest High Mobility TFTs (Thin Film Transistors)

Plasma Quest Limited in collaboration with Cambridge University have been developing high mobility alternatives to a-Si:H thin film transistor (TFT) devices based on amorphous transparent metal-oxides.

The properties of these thin film transistors - TFTs - are as follows:

  • Mobility ~ 10 cm2V-1s-1
  • Switching ratio > 106
  • Can be deposited into flexibles (Low temperature process)
  • Fully transparent options
  • InZnO or ZnO channel
  • Accurate control of the resistivity of the channel from insulating (ρ=3x1010Ω.cm) to conducting (ρ=3x10-3Ω.cm)

Download printable version of High Mobility TFTs.pdf
Download printable version of ZnO and HfO2 summary.pdf

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